The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Sep. 21, 2007
Yannick Veschetti, Saint Clair la Tour, FR;
Bruno Remiat, Grenoble, FR;
Yannick Veschetti, Saint Clair la Tour, FR;
Bruno Remiat, Grenoble, FR;
Commissariat A l'Energie Atomique, Paris, FR;
Abstract
A method of producing a photovoltaic cell. A passivation layer based on an intrinsic amorphous semiconductor is deposited on a back surface of a substrate based on a crystalline semiconductor. A first sacrificial mask including at least one through-opening on the passivation layer is screen-printed at a temperature less than or equal to 250° C. A doped amorphous semiconductor layer of a first type of conductivity is deposited at least in the opening. The first sacrificial mask is removed, leaving at least one doped amorphous semiconductor pad of the first type of conductivity remaining at the opening of the first sacrificial mask.