The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7972752 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 05, 2011

Filed:

Jun. 06, 2008
Applicant:

Takamitsu Furukawa, Tokyo, JP;

Inventor:

Takamitsu Furukawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resist pattern forming method capable of obtaining a smooth resist pattern. An exemplary method may utilize a photomask including a plurality of mask cells arranged in the form of a matrix. The length of one side of each of the mask cells may be smaller than the length corresponding to the resolution limit of the optical system of the exposure device. Each mask cell may have one or both of a light transmission region and a light shielding region, and the intensity of light passing through each mask cell may be determined by the ratio of the area of the light transmission region to the area of the mask cell. The photomask may be positioned at a vertical focus position other than the optimal focus position. The resist film may be exposed with light and may then be developed to produce the resist pattern.


Find Patent Forward Citations

Furukawa, Takamitsu. (2011). Photomask and method for forming a resist pattern (U.S. Patent No. 7972752). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7972752

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