The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Jan. 09, 2006
James E. Boyle, Saratoga, CA (US);
Reese Reynolds, Los Gatos, CA (US);
Ranaan Y. Zehavi, Sunnyvale, CA (US);
Robert W. Mytton, Salem, OR (US);
Tom L. Cadwell, Los Altos, CA (US);
James E. Boyle, Saratoga, CA (US);
Reese Reynolds, Los Gatos, CA (US);
Ranaan Y. Zehavi, Sunnyvale, CA (US);
Robert W. Mytton, Salem, OR (US);
Tom L. Cadwell, Los Altos, CA (US);
Ferrotec (USA) Corporation, Bedford, NH (US);
Abstract
Baffle wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. An all-silicon hot zone of a thermal furnace may include a silicon support tower placed within a silicon liner and supporting the polysilicon baffle wafers with silicon injector tube providing processing gas within the liner. The randomly oriented polysilicon may be used for other parts requiring a rugged member, for example, within a silicon processing chamber and for structural members.