The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Sep. 30, 2008
Haiwen Xi, Prior Lake, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Yuankai Zheng, Bloomington, MN (US);
Patrick Ryan, St. Paul, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Michael Xuefei Tang, Bloomington, MN (US);
Yuankai Zheng, Bloomington, MN (US);
Patrick Ryan, St. Paul, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Various embodiments of the present invention are generally directed to an apparatus and method associated with a semiconductor device with thermally coupled phase change layers. The semiconductor device comprises a first phase change layer selectively configurable in a relatively low resistance crystalline phase and a relatively high resistance amorphous phase, and a second phase change layer thermally coupled to the first phase change layer. The second phase change layer is characterized as a metal-insulator transition material. A programming pulse is applied to the semiconductor device from a first electrode layer to a second electrode layer to provide the first phase change layer with a selected resistance.