The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Apr. 26, 2007
Tomoyuki Ishii, Kokubunji, JP;
Yoshitaka Sasago, Tachikawa, JP;
Hideaki Kurata, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Tomoyuki Ishii, Kokubunji, JP;
Yoshitaka Sasago, Tachikawa, JP;
Hideaki Kurata, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
The invention provides a voltage applying structure having a reduced area penalty with respect to a data line. A wiring forming a global data line and a local data line formed in a p-type well region are connected via a select transistor. Two select lines are formed on a gate electrode of the select transistor. One select line is electrically connected to the gate electrode of the select transistor, however, the other select line is not connected to the select transistor. That is, an insulator film is formed between the select line and the gate electrode. As mentioned above, two select lines shorter than a gate length are provided on one select transistor. The select line is structured such as to be connected to the other select transistor.