The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Apr. 10, 2008
Applicants:
Gang Xu, Cupertino, CA (US);
Chun-ming Wang, Fremont, CA (US);
Fan Zhong, Fremont, CA (US);
Qi Luo, Cupertino, CA (US);
Inventors:
Gang Xu, Cupertino, CA (US);
Chun-Ming Wang, Fremont, CA (US);
Fan Zhong, Fremont, CA (US);
Qi Luo, Cupertino, CA (US);
Assignee:
QUALCOMM MEMS Technologies, Inc., San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/03 (2006.01); G02B 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.