The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Nov. 14, 2006
Applicants:

Takanori Aono, Hitachinaka, JP;

Tatsuya Nagata, Ishioka, JP;

Katsunori Asafusa, Kashiwa, JP;

Takashi Kobayashi, Nagareyama, JP;

Naoya Kanda, Fujisawa, JP;

Inventors:

Takanori Aono, Hitachinaka, JP;

Tatsuya Nagata, Ishioka, JP;

Katsunori Asafusa, Kashiwa, JP;

Takashi Kobayashi, Nagareyama, JP;

Naoya Kanda, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided an ultrasound probe including a first substrate having a silicon substrate and an ultrasound transmit-receive element, an acoustic lens disposed over an upper surface of the first substrate, and a damping layer disposed under the first substrate, in which a second substrate is disposed between a lower surface of the first substrate and an upper surface of the damping layer, and the second substrate is made of a material having approximately the same linear expansion coefficient and acoustic impedance as the silicon substrate of the first substrate. With this structure, it is possible to provide the ultrasound probe which can prevent damage to the silicon substrate due to temperature change and has excellent transmission/reception performance and structure reliability while reducing noise by reflected waves in transmission and reception.


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