The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jun. 10, 2005
Theodore Letavic, Putnam Valley, NY (US);
John Petruzzello, Carmel, NY (US);
Theodore Letavic, Putnam Valley, NY (US);
John Petruzzello, Carmel, NY (US);
NXP B.V., Eindhoven, NL;
Abstract
The present invention provides a vertical tapered dielectric high-voltage device () in which the device drift region is depicted by action of MOS field plates () formed in vertical trenches. The high-voltage device comprises: a substrate (); a silicon mesa () formed on the substrate and having a stripe geometry, wherein the silicon mesa provides a drift region having a constant doping profile; a recessed gate () and source (SN) formed on the silicon mesa; a trench () adjacent each side of the silicon mesa; and a metal-dielectric field plate structure () formed in each trench; wherein each metal-dielectric field plate structure comprises a dielectric () and a metal field plate () formed over the dielectric, and wherein a thickness of the dielectric increases linearly through a depth of the trench to provide a constant longitudinal electric field.