The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jun. 23, 2009
Applicant:
George K Celler, Summit, NJ (US);
Inventor:
George K Celler, Summit, NJ (US);
Assignee:
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A crystalline wafer comprising of a support substrate, a first layer and an interface layer. The first layer is of a first material in a relaxed state having a lattice parameter that is substantially equal to the nominal lattice parameter of the first material. The interface layer is in an at least partially molten state disposed between the support substrate and the first layer. The first material is preferably silicon germanium, and the interface layer includes germanium in a higher concentration than that of first material.