The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Sep. 15, 2008
Sang Yeob Song, Gyunggi-do, KR;
Jin Hyun Lee, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Kwang Ki Choi, Gyunggi-do, KR;
Pun Jae Choi, Gyunggi-do, KR;
Hyun Soo Kim, Gyunggi-do, KR;
Sang Bum Lee, Gyunggi-do, KR;
Sang Yeob Song, Gyunggi-do, KR;
Jin Hyun Lee, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Kwang Ki Choi, Gyunggi-do, KR;
Pun Jae Choi, Gyunggi-do, KR;
Hyun Soo Kim, Gyunggi-do, KR;
Sang Bum Lee, Gyunggi-do, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.