The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Jul. 10, 2009
Applicants:

Hsin-fei Meng, Hsinchu, TW;

Sheng-fu Hong, Hsinchu, TW;

Hsin-rong Tseng, Hsinchu, TW;

En-chen Chen, Hsinchu, TW;

Chia-hung Chu, Hsinchu, TW;

Inventors:

Hsin-Fei Meng, Hsinchu, TW;

Sheng-Fu Hong, Hsinchu, TW;

Hsin-Rong Tseng, Hsinchu, TW;

En-Chen Chen, Hsinchu, TW;

Chia-Hung Chu, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.


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