The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Mar. 13, 2008
Chul-kyu Kang, Suwon-si, KR;
Jong-hyun Choi, Suwon-si, KR;
Woo-sik Jun, Suwon-si, KR;
Hee-chul Jeon, Suwon-si, KR;
Chul-Kyu Kang, Suwon-si, KR;
Jong-Hyun Choi, Suwon-si, KR;
Woo-Sik Jun, Suwon-si, KR;
Hee-Chul Jeon, Suwon-si, KR;
Samsung Mobile Display Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.