The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Jun. 11, 2009
Applicants:

François Lelarge, Marcoussis, FR;

Benjamin Rousseau, Marcoussis, FR;

Alain Accard, Palaiseau, FR;

Frédéric Pommereau, Palaiseau, FR;

Francis Poingt, Palaiseau, FR;

Romain Brenot, Palaiseau, FR;

Inventors:

François Lelarge, Marcoussis, FR;

Benjamin Rousseau, Marcoussis, FR;

Alain Accard, Palaiseau, FR;

Frédéric Pommereau, Palaiseau, FR;

Francis Poingt, Palaiseau, FR;

Romain Brenot, Palaiseau, FR;

Assignee:

Alcatel Lucent, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Method of manufacturing an optical device, and an optical device, the optical device having one or more layers () of quantum-dots located in-between barrier layers (). A spacer layer () is grown on a barrier layer (), such that the spacer layer () is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer ().


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