The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Nov. 27, 2007
Applicants:

Kenji Ishikawa, Kawasaki, JP;

Hideharu Shido, Kawasaki, JP;

Takeo Nagata, Kawasaki, JP;

Teruo Kurahashi, Kawasaki, JP;

Yasuyoshi Mishima, Kawasaki, JP;

Inventors:

Kenji Ishikawa, Kawasaki, JP;

Hideharu Shido, Kawasaki, JP;

Takeo Nagata, Kawasaki, JP;

Teruo Kurahashi, Kawasaki, JP;

Yasuyoshi Mishima, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating an electron device on a substrate includes the steps of forming a dummy film over the substrate such that the dummy film covers a device region of the substrate and an outer region of the substrate outside the device region, forming a dummy pattern by patterning the dummy film such that the dummy pattern has a first height in the device region and a second height smaller than the first height in the outer region, forming another film over the substrate such that the film covers the dummy pattern in the device region and in the outer region with a shape conformal to a cross-sectional shape of the dummy pattern, and applying an anisotropic etching process acting generally perpendicularly to the substrate such that a surface of the substrate is exposed in the device region and in the outer region.


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