The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
May. 21, 2007
Takashi Nakagawa, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Makiko Oshida, Tokyo, JP;
Nobuyuki Ikarashi, Tokyo, JP;
Kensuke Takahashi, Tokyo, JP;
Kenzo Manabe, Tokyo, JP;
Takashi Nakagawa, Tokyo, JP;
Toru Tatsumi, Tokyo, JP;
Makiko Oshida, Tokyo, JP;
Nobuyuki Ikarashi, Tokyo, JP;
Kensuke Takahashi, Tokyo, JP;
Kenzo Manabe, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.