The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Apr. 10, 2007
Applicants:

Andre P. Labonte, Lewiston, ME (US);

Todd P. Thibeault, Gorham, ME (US);

Inventors:

Andre P. Labonte, Lewiston, ME (US);

Todd P. Thibeault, Gorham, ME (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

An isolation trench structure includes both a deep trench isolation (DTI) trench and a shallow trench isolation (STI) trench. The DTI trench can be formed by etching a deeper, narrower trench in a substrate and filling the deeper trench with one or more materials (such as an oxide). The STI trench can be formed by etching a shallower, wider trench in the substrate and filling the shallower trench with one or more materials (such as an oxide). The STI trench surrounds a portion of the DTI trench, such as by completely encircling an upper portion of the DTI trench. The DTI and STI trenches are filled during different operations, and the DTI and STI trenches can be filled with the same material(s) or with different material(s).


Find Patent Forward Citations

Loading…