The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Sep. 04, 2008
Applicant:
Han-choon Lee, Gangdong-gu, KR;
Inventor:
Han-Choon Lee, Gangdong-gu, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A M-I-M capacitor semiconductor device capable of enhancing the reliability and capacitance of a capacitor and maximizing the integration density of the device, and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate, a capacitor lower metal layer formed over the semiconductor substrate, a SiN capacitor dielectric layer having a thickness of approximately 30 nm or less formed over the capacitor lower metal layer, and a capacitor upper metal layer formed over a portion of the capacitor dielectric layer and overlapping with the capacitor lower metal layer.