The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Mar. 02, 2010
Akio Kaneko, Kawasaki, JP;
Seiji Inumiya, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Kazuhiro Eguchi, Chigasaki, JP;
Motoyuki Sato, Yokohama, JP;
Akio Kaneko, Kawasaki, JP;
Seiji Inumiya, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Kazuhiro Eguchi, Chigasaki, JP;
Motoyuki Sato, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.