The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2011

Filed:

Oct. 05, 2007
Applicants:

Toshiki Ito, Kawasaki, JP;

Natsuhiko Mizutani, Tokyo, JP;

Akira Terao, Yokohama, JP;

Inventors:

Toshiki Ito, Kawasaki, JP;

Natsuhiko Mizutani, Tokyo, JP;

Akira Terao, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l; a light shielding layer lformed above the transparent mask matrix land containing silicon; a reflective layer lformed between the transparent mask matrix land the light shielding layer l; and an opening pattern provided in the reflective layer land the light shielding layer land being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix land the reflective layer lis higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.


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