The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2011
Filed:
Jan. 06, 2006
Taro Hitosugi, Yamato, JP;
Yutaka Furubayashi, Kawasaki, JP;
Tetsuya Hasegawa, Tokorozawa, JP;
Yasushi Hirose, Tokyo, JP;
Junpei Kasai, Tokyo, JP;
Miki Moriyama, Aichi-ken, JP;
Taro Hitosugi, Yamato, JP;
Yutaka Furubayashi, Kawasaki, JP;
Tetsuya Hasegawa, Tokorozawa, JP;
Yasushi Hirose, Tokyo, JP;
Junpei Kasai, Tokyo, JP;
Miki Moriyama, Aichi-ken, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi-ken, JP;
Kanagawa Academy of Science and Technology, Kawasaki-shi, Kanagawa, JP;
Abstract
There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlGaInN layer (wherein 0≦x≦1, 0≦y≦1, and 0≦z≦1) and an oxide material layer composed of a metal oxide and formed on the AlGaInN layer. The metal oxide may be TiO. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.