The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Aug. 04, 2006
Applicant:
Klaus Herold, Poughquag, NY (US);
Inventor:
Klaus Herold, Poughquag, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract
Systems and methods of optical proximity correction are disclosed. A preferred embodiment comprises a method of determining optical proximity correction, which includes providing a design for a lithography mask. The design comprises a layout for a material layer of a semiconductor device. A predicted wafer image producible by the design for the lithography mask is calculated, and an amount of error between a target image and the calculated predicted wafer image is measured over a plurality of pixels of the predicted wafer image. The plurality of pixels comprises a plurality of different sizes.