The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Sep. 25, 2008
Koichi Osano, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Satoru Fujii, Osaka, JP;
Kazuhiko Shimakawa, Osaka, JP;
Koichi Osano, Osaka, JP;
Shunsaku Muraoka, Osaka, JP;
Satoru Fujii, Osaka, JP;
Kazuhiko Shimakawa, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile memory element () of the present invention includes a resistance variable layer () which intervenes between a first electrode () and a second electrode () and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage () and the second voltage (), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value R, or a low-resistance state in which its resistance value is a low-resistance value R