The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2011

Filed:

Jul. 13, 2009
Applicants:

Yongchul Ahn, Eagan, MN (US);

Antoine Khoueir, Apple Valley, MN (US);

Shuiyuan Huang, Apple Valley, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Maroun Khoury, Burnsville, MN (US);

Inventors:

Yongchul Ahn, Eagan, MN (US);

Antoine Khoueir, Apple Valley, MN (US);

Shuiyuan Huang, Apple Valley, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Maroun Khoury, Burnsville, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level.


Find Patent Forward Citations

Loading…