The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2011

Filed:

May. 18, 2007
Applicants:

Yuichiro Haramoto, Yamanashi, JP;

Takamasa Kato, Yamanashi, JP;

Kohki Hiroshima, Yamanashi, JP;

Inventors:

Yuichiro Haramoto, Yamanashi, JP;

Takamasa Kato, Yamanashi, JP;

Kohki Hiroshima, Yamanashi, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting with the first electrode group.


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