The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
May. 24, 2002
Hiroyuki Akinaga, Tsukuba, JP;
Masaharu Oshima, Tokyo, JP;
Masaki Mizuguchi, Tsukuba, JP;
Abstract
A magneto-resistance effect device () includes a semiconductor region () having a surface provided with a plurality of isolated metal micro-particles () of not more than 100 μm disposed at intervals of not more than 1 μm, a semiconductor or half-metal cap layer () for covering the semiconductor region and a plurality of electrodes () disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device () has various excellent characteristics.