The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Feb. 21, 2007
Shuji Tanaka, Gunma, JP;
Shuichi Kikuchi, Gunma, JP;
Kiyofumi Nakaya, Saitama, JP;
Kazuhiro Yoshitake, Gunma, JP;
Shuji Tanaka, Gunma, JP;
Shuichi Kikuchi, Gunma, JP;
Kiyofumi Nakaya, Saitama, JP;
Kazuhiro Yoshitake, Gunma, JP;
SANYO Electric Co., Ltd., Osaka, JP;
Abstract
The invention provides a high voltage MOS transistor having a high source/drain breakdown voltage of about 300V and a low on-resistance. An N-type body layer is formed extending from a source layer side to under a gate electrode. A P-type second drift layer is formed in an epitaxial semiconductor layer by being diffused deeper than a first drift layer, extending from under the first drift layer to under the gate electrode and forming a PN junction with the body layer under the gate electrode. A surface of the body layer between this second drift layer and the source layer serves as a channel region. The first drift layer is formed at a distance from a left end of the gate electrode where electric field concentration easily occurs.