The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Apr. 29, 2008
Sun-jung Kim, Giheung-gu, KR;
Young-sun Kim, Suwon, KR;
Se-hoon OH, Hwasung, KR;
Eun-ha Lee, Seoul, KR;
Young-su Chung, Suwon, KR;
Sun-Jung Kim, Giheung-gu, KR;
Young-Sun Kim, Suwon, KR;
Se-Hoon Oh, Hwasung, KR;
Eun-Ha Lee, Seoul, KR;
Young-Su Chung, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In one aspect, a memory cell includes a plurality of dielectric layers located within a charge storage gate structure. At least one of the dielectric layers includes an dielectric material including oxygen, and nano regions including oxygen embedded in the dielectric material, where an oxygen concentration of the dielectric material is the greater than an oxygen concentration of the nano regions. In another aspect, at least one of the dielectric layers includes a dielectric material and nano regions embedded in the dielectric material, where an atomic composition of the dielectric material is the same as the atomic composition of the nano regions, and a density of the dielectric material is the greater than a density of the nano regions.