The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2011

Filed:

Aug. 24, 2009
Applicants:

Michael A. Todd, Phoenix, AZ (US);

Keith D. Weeks, Mesa, AZ (US);

Christiaan J. Werkhoven, Tempe, AZ (US);

Christophe F. Pomarede, Phoenix, AZ (US);

Inventors:

Michael A. Todd, Phoenix, AZ (US);

Keith D. Weeks, Mesa, AZ (US);

Christiaan J. Werkhoven, Tempe, AZ (US);

Christophe F. Pomarede, Phoenix, AZ (US);

Assignee:

ASM America, Inc., Phoenix, AZ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.


Find Patent Forward Citations

Loading…