The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Feb. 27, 2010
Takuya Futase, Tokyo, JP;
Takuya Futase, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
To solve a problem that it becomes difficult to lower contact resistance between nickel-based metal silicide and metal for contact as the result of the miniaturization of the hole. One invention of the present application is a method of manufacturing a semiconductor integrated circuit device having a MISFET subjected to silicidation of a source/drain region and the like by nickel-based metal silicide, the method performing a heat treatment for the upper surface of a silicide film in a non-plasma reducing vapor phase atmosphere containing a gas having a nitrogen-hydrogen bond as one of main gas components, before forming a barrier metal at a contact hole provided at a pre-metal insulating film.