The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Jul. 09, 2007
Ruben Lieten, Zonhoven, BE;
Stefan Degroote, Scherpenheuven-Zichem, BE;
Ruben Lieten, Zonhoven, BE;
Stefan Degroote, Scherpenheuven-Zichem, BE;
IMEC, Leuven, BE;
Vrije Universiteit Brussel, Brussels, BE;
Abstract
The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (), on a substrate (), the substrate () comprising at least a Ge surface (), preferably with hexagonal symmetry. The method comprises heating the substrate () to a nitridation temperature between 400° C. and 940° C. while exposing the substrate () to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (), onto the Ge surface () at a deposition temperature between 100° C. and 940° C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.