The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Feb. 19, 2008
Francesca Iacopi, Leuven, BE;
Philippe M. Vereecken, Liège, BE;
Francesca Iacopi, Leuven, BE;
Philippe M. Vereecken, Liège, BE;
IMEC, Leuven, BE;
Abstract
The present invention provides a method for forming a layer () of polycrystalline semiconductor material on a substrate (). The method comprises providing at least one catalyst particle () on a substrate (), the at least one catalyst particle () comprising at least a catalyst material, the catalyst material having a melt temperature of between room temperature and 500° C., or being able to form a catalyst material/semiconductor material alloy with a eutectic temperature of between room temperature and 500° C., and forming a layer () of polycrystalline semiconductor material on the substrate () at temperatures lower than 500° C. by using plasma enhancement of a precursor gas, thereby using the at least one catalyst particle () as an initiator. The present invention furthermore provides a layer () of polycrystalline semiconductor material obtained by the method according to embodiments of the present invention.