The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Mar. 24, 2008
Shengzhong Liu, Rochester Hills, MI (US);
Ginger Pietka, Harrison Township, MI (US);
Kevin Beernink, Clarkston, MI (US);
Arindam Banerjee, Bloomfield Hills, MI (US);
Chi Yang, Troy, MI (US);
Subhendu Guha, Bloomfield Hills, MI (US);
Shengzhong Liu, Rochester Hills, MI (US);
Ginger Pietka, Harrison Township, MI (US);
Kevin Beernink, Clarkston, MI (US);
Arindam Banerjee, Bloomfield Hills, MI (US);
Chi Yang, Troy, MI (US);
Subhendu Guha, Bloomfield Hills, MI (US);
United Solar Ovonic LLC, Auburn Hills, MI (US);
Abstract
A system for the laser scribing of semiconductor devices includes a laser light source operable to selectably deliver laser illumination at a first wavelength and at a second wavelength which is shorter than the first wavelength. The system further includes a support for a semiconductor device and an optical system which is operative to direct the laser illumination from the light source to the semiconductor device. The optical system includes optical elements which are compatible with the laser illumination of the first wavelength and the laser illumination of the second wavelength. In specific instances, the first wavelength is long wavelength illumination such as illumination of at least 1000 nanometers, and the second wavelength is short wavelength illumination which in specific instances is 300 nanometers or shorter. By the use of the differing wavelengths, specific layers of the semiconductor device may be scribed without damage to subjacent layers. Also disclosed are specific scribing processes.