The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
May. 23, 2007
Tae Kyung Won, San Jose, CA (US);
Soo Young Choi, Fremont, CA (US);
Yong Kee Chae, Pleasanton, CA (US);
Liwei LI, Sunnyvale, CA (US);
Shuran Sheng, Sunnyvale, CA (US);
Tae Kyung Won, San Jose, CA (US);
Soo Young Choi, Fremont, CA (US);
Yong Kee Chae, Pleasanton, CA (US);
Liwei Li, Sunnyvale, CA (US);
Shuran Sheng, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.