The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Nov. 24, 2006
Applicant:
Jong Hee Lee, Gyeonggi-do, KR;
Inventor:
Jong Hee Lee, Gyeonggi-do, KR;
Assignee:
Theleds Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a p-type gallium nitride-based (GaN) device is disclosed. In accordance with the method, an Mg in an MgNlayer disposed on p-type gallium nitride is diffused into the p-type gallium nitride by a heat treatment to dope the p-type gallium nitride with the Mg while activating the diffused Mg simultaneously, eliminating a need for an additional heat treatment for the activation and preventing a nitrogen in the p-type gallium nitride from being separated therefrom.
Lee, Jong. (2011). Method for manufacturing p type gallium nitride based device (U.S. Patent No. 7964425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7964425
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