The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Jan. 03, 2008
Osamu Goto, Miyagi, JP;
Takeharu Asano, Tokyo, JP;
Yasuhiko Suzuki, Miyagi, JP;
Motonobu Takeya, Tokyo, JP;
Katsuyoshi Shibuya, Tokyo, JP;
Takashi Mizuno, Miyagi, JP;
Tsuyoshi Tojo, Miyagi, JP;
Shiro Uchida, Miyagi, JP;
Masao Ikeda, Tokyo, JP;
Osamu Goto, Miyagi, JP;
Takeharu Asano, Tokyo, JP;
Yasuhiko Suzuki, Miyagi, JP;
Motonobu Takeya, Tokyo, JP;
Katsuyoshi Shibuya, Tokyo, JP;
Takashi Mizuno, Miyagi, JP;
Tsuyoshi Tojo, Miyagi, JP;
Shiro Uchida, Miyagi, JP;
Masao Ikeda, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.