The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Sep. 03, 2008
Wei-long Liu, Yunlin County, TW;
Wen-jauh Chen, Yunlin County, TW;
Shu-huei Hsieh, Yunlin County, TW;
Wei-Long Liu, Yunlin County, TW;
Wen-Jauh Chen, Yunlin County, TW;
Shu-Huei Hsieh, Yunlin County, TW;
National Formosa Univeristy, Douliou, Yunlin County, TW;
Abstract
The present invention discloses a gas sensor made of field effect transistor based on ZnO nanowires (ZnO-FET) which operates according to the principle of metal-oxide-semiconductor field effect transistor (MOSFET) and has a charge carrier channel made of ZnO nanowires between source and drain. The gas sensor device disclosed in the present invention has three electrodes-gate, source and drain, so that it is different from the known gas sensor device which has only two electrodes-cathode and anode. The ZnO nanowires as charge channel in the gas sensor device of the present invention is an n-type semiconductor with high specific surface area, and its electric resistance can be controlled by the gate bias, so that the capability of the present device for sensing gas can be largely promoted.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile