The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7961452 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 14, 2011

Filed:

Mar. 29, 2006
Applicants:

Takashi Oi, Matsudo, JP;

Yasukazu Iwasaki, Yokohama, JP;

Kazuhiro Sayama, Tsukuba, JP;

Inventors:

Takashi Oi, Matsudo, JP;

Yasukazu Iwasaki, Yokohama, JP;

Kazuhiro Sayama, Tsukuba, JP;

Assignee:

Nissan Motor Co., Ltd., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor photoelectrode of the present invention includes a metallic substrate having irregularities in a surface and a semiconductor layer which is formed on the surface of the metallic substrate and composed of a photocatalytic material. This can increase the light absorption efficiency and, furthermore, prevent recombination of charges.


Find Patent Forward Citations

Oi, Takashi. (2011). Semiconductor photoelectrode, method for manufacturing the same, and light energy converting device (U.S. Patent No. 7961452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7961452

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