The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Sep. 27, 2007
Hardayal Singh Gill, Palo Alto, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Hardayal Singh Gill, Palo Alto, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A magnetoresistive sensor having a greatly reduced read gap. The sensor has a pinned layer structure formed above the free layer. A layer of antiferromagnetic material (AFM layer) is formed over the pinned layer structure and has a front edge disposed toward, but recessed from the air bearing surface. An electrically conductive, magnetic lead is formed over the pinned layer and AFM layer such that the lead fills a space between the AFM layer and the air bearing surface. In this way, the read gap is distance between the outermost portion of the pinned layer structure and free layer. The thickness of the AFM layer and capping layer are not included in the read gap.