The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7960805 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 14, 2011

Filed:

Jan. 05, 2009
Applicants:

Jen-yi Chen, Hsinchu County, TW;

Chin-horng Wang, Hsinchu, TW;

Inventors:

Jen-Yi Chen, Hsinchu County, TW;

Chin-Horng Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

An MEMS structure and a method of manufacturing the same are provided. The MEMS structure includes a substrate and at least one suspended microstructure located on the substrate. The suspended microstructure includes a plurality of metal layers, at least one dielectric layer, and at least one peripheral metal wall. The dielectric layer is sandwiched by the metal layers, and the peripheral metal wall is parallel to a thickness direction of the suspended microstructure and surrounds an edge of the dielectric layer.


Find Patent Forward Citations

Chen, Jen-Yi. (2011). Mems structure with suspended microstructure that includes dielectric layer sandwiched by plural metal layers and the dielectric layer having an edge surrounded by peripheral metal wall (U.S. Patent No. 7960805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7960805

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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