The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Mar. 19, 2009
Yong-don Kim, Hwaseong-si, KR;
Yong-chan Kim, Suwon-si, KR;
Joung-ho Kim, Suwon-si, KR;
Mueng-ryul Lee, Seoul, KR;
Eung-kyu Lee, Seoul, KR;
Jong-wook Lim, Seoul, KR;
Yong-Don Kim, Hwaseong-si, KR;
Yong-Chan Kim, Suwon-si, KR;
Joung-Ho Kim, Suwon-si, KR;
Mueng-Ryul Lee, Seoul, KR;
Eung-Kyu Lee, Seoul, KR;
Jong-Wook Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor integrated circuit device may include: a substrate that includes a high-voltage device region and a low-voltage device region defined on the substrate; a first buried impurity layer formed in at least a portion of the high-voltage device region and coupled to a first voltage; a second buried impurity layer formed in at least a portion of the low-voltage device region and coupled to a second voltage less than the first voltage; and a well formed on the second buried impurity layer in the low-voltage device region and coupled to a third voltage less than the second voltage.