The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7960776 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 14, 2011

Filed:

Sep. 27, 2007
Applicants:

Myongseob Kim, Pleasanton, CA (US);

Nick Yu-min Shen, Hsin-Chu County, TW;

Chungho Lee, Ithaca, NY (US);

Edwin Chihchuan Kan, Ithaca, NY (US);

Inventors:

Myongseob Kim, Pleasanton, CA (US);

Nick Yu-Min Shen, Hsin-Chu County, TW;

Chungho Lee, Ithaca, NY (US);

Edwin Chihchuan Kan, Ithaca, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sensor includes a field effect transistor having a source, drain, a control gate and floating gate, wherein the floating gate has an extended portion extending away from the control gate. A sensing gate is capacitively coupled to the extended portion of the floating gate. A polymer electret sensing coating is electrically coupled to the sensing gate.


Find Patent Forward Citations

Kim, Myongseob. (2011). Transistor with floating gate and electret (U.S. Patent No. 7960776). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7960776

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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