The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Nov. 07, 2008
Lorene Courtade, La Garde, FR;
Judit Lisoni Reyes, Oud-Heverlee, BE;
Ludovic Goux, Hannut, BE;
Christian Turquat, La Valette du Var, FR;
Christophe Muller, Toulon, FR;
Dirk Wouters, Leuven, BE;
Lorene Courtade, La Garde, FR;
Judit Lisoni Reyes, Oud-Heverlee, BE;
Ludovic Goux, Hannut, BE;
Christian Turquat, La Valette du Var, FR;
Christophe Muller, Toulon, FR;
Dirk Wouters, Leuven, BE;
IMEC, Leuven, BE;
University of South Toulon VAR, La Garde Cedex, FR;
Abstract
The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.