The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2011

Filed:

Dec. 01, 2006
Applicants:

Sung-yool Choi, Daejeon, KR;

Min Ki Ryu, Seoul, KR;

Ansoon Kim, Daejeon, KR;

Chil Seong Ah, Daejeon, KR;

Han Young Yu, Daejeon, KR;

Inventors:

Sung-Yool Choi, Daejeon, KR;

Min Ki Ryu, Seoul, KR;

Ansoon Kim, Daejeon, KR;

Chil Seong Ah, Daejeon, KR;

Han Young Yu, Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided.


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