The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Apr. 27, 2004
Mansoor B a Jalil, Singapore, SG;
Seng Ghee Tan, Singapore, SG;
Tow Chong Chong, Singapore, SG;
Yun Fook Liew, Singapore, SG;
Kie Leong Teo, Singapore, SG;
Mansoor B A Jalil, Singapore, SG;
Seng Ghee Tan, Singapore, SG;
Tow Chong Chong, Singapore, SG;
Yun Fook Liew, Singapore, SG;
Kie Leong Teo, Singapore, SG;
Agency for Science, Technology and Research, Centros, SG;
Abstract
The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.