The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Nov. 08, 2004
Timothy J Phillips, Malvern, GB;
Timothy Ashley, Malvern, GB;
Timothy J Phillips, Malvern, GB;
Timothy Ashley, Malvern, GB;
QinetiQ Limited, London, GB;
Abstract
In a transistor in which the majority carriers are holes, at least one narrow bandgap region or layer is doped p-type or contains an excess of holes and is subject to compressive mechanical strain, whereby hole mobility may be significantly increased. In a p-channel quantum well FET, the quantum well InSb well p-type layer(modulation or directly doped) lies between InAlSb layerswhere x is of a value sufficient to induce strain in layerto an extent that light and heavy holes are separated by much more than kT. Transistors falling within the invention, including bipolar pnp devices, may be used with their more conventional electron majority carriers counterparts in complementary logic circuitry.