The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
May. 05, 2010
Je-hun Lee, Seoul, KR;
Dong-ju Yang, Seoul, KR;
Tae-hyung Ihn, Seoul, KR;
Do-hyun Kim, Seoul, KR;
Sun-young Hong, Yongin-si, KR;
Seung-jae Jung, Seoul, KR;
Chang-oh Jeong, Suwon-si, KR;
Eun-guk Lee, Yongin-si, KR;
Je-hun Lee, Seoul, KR;
Dong-ju Yang, Seoul, KR;
Tae-hyung Ihn, Seoul, KR;
Do-hyun Kim, Seoul, KR;
Sun-young Hong, Yongin-si, KR;
Seung-jae Jung, Seoul, KR;
Chang-oh Jeong, Suwon-si, KR;
Eun-guk Lee, Yongin-si, KR;
Abstract
Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile