The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Jul. 08, 2009
Yasuyoshi Itoh, Tokyo, JP;
Yuichi Masutani, Tokyo, JP;
Eiji Shibata, Kumamoto, JP;
Kenichi Miyamoto, Kumamoto, JP;
Yasuyoshi Itoh, Tokyo, JP;
Yuichi Masutani, Tokyo, JP;
Eiji Shibata, Kumamoto, JP;
Kenichi Miyamoto, Kumamoto, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
In a method of manufacturing a TFT substrate in accordance with an exemplary aspect of the present invention, an intrinsic semiconductor film, an impurity semiconductor film, and a conductive film for source lines are formed in succession, and a resist having a thin-film portion and a thick-film portions is formed on the conductive film for source lines. Then, etching is performed by using the resist as a mask, and after that, a part of the conductive film for source lines is exposed by removing the thin-film portion of the resist. Next, the exposed conductive film for source lines is etched by using the thick-film portions of the resist a mask, so that the impurity semiconductor film is exposed. Then, by etching the exposed impurity semiconductor film, a back channel region of a TFTis formed. Further, a dummy back channel region, which is irrelevant to the operation of the finished product, is also formed in a portion other than the TFTregion.