The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Dec. 23, 2008
Kirk William Baldwin, Murray Hill, NJ (US);
Loren N. Pfeiffer, Harding Township, Morris County, NJ (US);
Kenneth William West, Mendham Township, Morris County, NJ (US);
Robert L Willett, Warren, NJ (US);
Kirk William Baldwin, Murray Hill, NJ (US);
Loren N. Pfeiffer, Harding Township, Morris County, NJ (US);
Kenneth William West, Mendham Township, Morris County, NJ (US);
Robert L Willett, Warren, NJ (US);
Alcatel-Lucent USA Inc., Murray Hill, NJ (US);
Abstract
An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.