Switching element, switching element drive method and fabrication method, reconfigurable logic integrated circuit, and memory element

Abstract

The switching element of the present invention includes: an ion conduction layer () in which metal ions can move freely; a first electrode () that contacts the ion conduction layer (); and a second electrode () that contacts the ion conduction layer (), that is formed such that the ion conduction layer () is interposed between the first electrode () and the second electrode (), and that supplies metal ions to the ion conduction layer () or that receives metal ions from the ion conduction layer () to cause precipitation of the metal that corresponds to the metal ions. An introduction path () composed of the metal and of a prescribed width is further provided on the ion conduction layer () for electrically connecting the first electrode () and the second electrode (). The application of voltage to the first electrode () relative to the second electrode () then causes an electrochemical reaction between the introduction path () and the second electrode () whereby the electrical characteristics are switched.