The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2011
Filed:
Mar. 31, 2009
Konstantin V. Loiko, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Taras A. Kirichenko, Austin, TX (US);
Konstantin V. Loiko, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Taras A. Kirichenko, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of making a semiconductor device on a semiconductor layer includes: forming a gate dielectric over the semiconductor layer; forming a layer of gate material over the gate dielectric; etching the layer of gate material to form a select gate; forming a storage layer that extends over the select gate and over a portion of the semiconductor layer; depositing an amorphous silicon layer over the storage layer; etching the amorphous silicon layer to form a control gate; and annealing the semiconductor device to crystallize the amorphous silicon layer.